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Technische Daten

Kategorie:Discrete Semiconductor Products
Familie:FETs - Arrays
Typ FET:N and P-Channel
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
Strom - Drain (Id) bei 25 & deg; C:450mA, 310mA
Rds On (Max) @ Id, Vgs:990 mOhm @ 100mA, 4.5V
VGS (th) (Max) @ Id:1V @ 250µA
Gate-Ladung (Qg) @ VGS:0.5nC @ 4.5V
Eingangskapazität (Ciss) @ Vds:27.6pF @ 15V
Leistung - max:350mW
Befestigungsart:Surface Mount
Verpackung / Gehäuse:SOT-963
Supplier Device-Gehäuse:SOT-963
Verpackung:Tape & Reel (TR)
Dynamische Katalog:N and P-Channel Logic Level Gate FETs