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Technische Daten

Kategorie:Discrete Semiconductor Products
Familie:FETs - Single
Dynamische Katalog:N-Channel Logic Level Gate FETs
Andere Namen:FDS6680ATR
Produktschulungsmodule:High Voltage Switches for Power Processing SMPS Power Switch
Befestigungsart:Surface Mount
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Supplier Device-Gehäuse:8-SOIC N
Leistung - max:1W
Typ FET:MOSFET N-Channel, Metal Oxide
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
Strom - Drain (Id) bei 25 & deg; C:12.5A
Rds On (Max) @ Id, Vgs:9.5 mOhm @ 12.5A, 10V
VGS (th) (Max) @ Id:3V @ 250µA
Gate-Ladung (Qg) @ VGS:23nC @ 5V
Eingangskapazität (Ciss) @ Vds:1620pF @ 15V