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Categoria:Discrete Semiconductor Products
Famiglia:FETs - Arrays
Tipo FET:N and P-Channel
Caratteristica FET:Logic Level Gate
Tensione drain-source (Vdss):20V
Corrente - Drain continuo (Id) @ 25 & deg; C:450mA, 310mA
Rds On (max) a Id, Vgs:990 mOhm @ 100mA, 4.5V
Vgs (th) (max) a Id:1V @ 250µA
Carica gate (Qg) @ Vgs:0.5nC @ 4.5V
Capacità di ingresso (Ciss) @ Vds:27.6pF @ 15V
Potenza - Max:350mW
Tipo montaggio:Surface Mount
Contenitore / involucro:SOT-963
Contenitore dispositivo fornitore:SOT-963
imballaggio:Tape & Reel (TR)
catalogo dinamico:N and P-Channel Logic Level Gate FETs