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범주:Discrete Semiconductor Products
가족:FETs - Arrays
FET 유형:N and P-Channel
FET 특징:Logic Level Gate
소스 전압에 드레인 (Vdss):20V
전류 - 연속 드레인 (Id)을 25 ℃, @; 기음:450mA, 310mA
이드의 Vgs @ RDS에서 (최대):990 mOhm @ 100mA, 4.5V
아이디 @ VGS (일) (최대):1V @ 250µA
게이트 충전 (의 Qg) @의 Vgs:0.5nC @ 4.5V
입력 정전 용량 Vds를 @ (Ciss이):27.6pF @ 15V
전력 - 최대:350mW
실장 형:Surface Mount
패키지 / 케이스:SOT-963
제조업체 장치 패키지:SOT-963
포장:Tape & Reel (TR)
동적 카탈로그:N and P-Channel Logic Level Gate FETs